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researcher

Raman Sankar

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.str-el1
ORCID 0000-0003-4702-2517

identity via Semantic Scholar / OpenAlex

most citedScreening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

73 citations · 79 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2016★ 73 cited

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Sukrit Sucharitakul, Rajesh Kumar Ulaganathan, Raman Sankar +6

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their…

cond-mat.str-el2014★ 6 cited

Two-step antiferromagnetic transition and moderate triangular frustration in Li2Co(WO4)2

I. Panneer Muthuselvam, R. Sankar, A. V. Ushakov +3

We present a detailed investigation of the magnetic properties of the spin-23​ system Li2​Co(WO4​)2​ by means of magnetic susceptibility and specific heat. Our expe…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.