1 citations · 1 across the 1 of their papers we have counts for
4 papers
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
Andreas Salomon, Johannes Aberl, Lada Vukušić +8
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip…
Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers
Andreas Salomon, Johannes Aberl, Enrique Prado Navarrete +4
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based q…
Local Density-of-States Mapping in Photonic Crystal Resonators by Deterministically Positioned Germanium Quantum Dots
Magdalena Schatzl, Florian Hackl, Martin Glaser +6
We report on mapping of the local density of states in L3 photonic crystal resonators (PCR) via deterministically positioned single Ge quantum dots (QDs). Perfect site-control of G…