2 citations · 2 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2023
Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory
Hiroko Arai, Hiroshi Imamura
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are…
cond-mat.mes-hall2014★ 2 cited
Role of Magnetic Field in Self-Oscillation of Nanomagnet Excited by Spin Torque
Tomohiro Taniguchi, Shingo Tamaru, Hiroko Arai +3
The critical current of the self-oscillation of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studi…