collaborators

1 paper

cond-mat.mtrl-sci2016

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

Wenwu Pan, Liang Zhu, Liyao Zhang +6

InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II tra…