22 citations · 53 across the 4 of their papers we have counts for
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Boron and nitrogen doping in graphene antidot lattices
Søren J. Brun, Vitor M. Pereira, Thomas G. Pedersen
Bottom-up fabrication of graphene antidot lattices (GALs) has previously yielded atomically precise structures with sub-nanometer periodicity. Focusing on this type of experimental…
Stability and magnetization of free-standing and graphene-embedded iron membranes
Morten Rishøj Thomsen, Søren Jacob Brun, Thomas Garm Pedersen
Inspired by recent experimental realizations of monolayer Fe membranes in graphene perforations, we perform ab initio calculations of Fe monolayers and membranes embedded in graphe…
Dirac model of electronic transport in graphene antidot barriers
M. R. Thomsen, S. J. Brun, T. G. Pedersen
In order to use graphene for semiconductor applications, such as transistors with high on/off ratios, a band gap must be introduced into this otherwise semimetallic material. A pro…
Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
S. J. Brun, M. R. Thomsen, T. G. Pedersen
The electronic properties of graphene may be changed from semimetallic to semiconducting by introducing perforations (antidots) in a periodic pattern. The properties of such graphe…