activity
20112016
most citedLow-temperature photocarrier dynamics in monolayer MoS2

784 citations · 1.1k across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2016★ 171 cited

Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization

D. Schmidt, T. Godde, J. Schmutzler +9

We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under…

cond-mat.mes-hall2016★ 17 cited

Experimental realization of a polariton beam amplifier

Dominik Niemietz, Johannes Schmutzler, Przemyslaw Lewandowski +8

In this report we demonstrate a novel concept for a planar cavity polariton beam amplifier using non-resonant excitation. In contrast to resonant excitation schemes, background car…

cond-mat.mes-hall2014★ 64 cited

All-optical flow control of a polariton condensate using non-resonant excitation

Johannes Schmutzler, Przemyslaw Lewandowski, Marc Aßmann +6

The precise adjustment of the polariton condensate flow under incoherent excitation conditions is an indispensable prerequisite for polariton-based logic gate operations. In this r…

cond-mat.mes-hall2014★ 22 cited

Nonlinear spectroscopy of exciton-polaritons in a GaAs-based microcavity

Johannes Schmutzler, Marc Aßmann, Thomas Czerniuk +4

We present a systematic investigation of two-photon excitation processes in a GaAs-based microcavity in the strong-coupling regime. We observe second harmonic generation resonant t…

cond-mat.mes-hall2014★ 22 cited

Influence of interactions with non-condensed particles on the coherence of a 1D polariton condensate

Johannes Schmutzler, Tomasz Kazimierczuk, Ömer Bayraktar +6

One-dimensional polariton condensates (PoCos) in a photonic wire are generated through non-resonant laser excitation, by which also a reservoir of background carriers is created. I…

cond-mat.mtrl-sci2011★ 784 cited

Low-temperature photocarrier dynamics in monolayer MoS2

T. Korn, S. Heydrich, M. Hirmer +2

The band structure of MoS strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of…