91 citations · 169 across the 4 of their papers we have counts for
4 papers
A gate-variable spin current demultiplexer based on graphene
Li Su, Xiaoyang Lin, Youguang Zhang +5
Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…
Current-limiting challenges for all-spin logic devices
Li Su, Youguang Zhang, Jacques-Olivier Klein +4
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memor…