3 papers
cond-mat.mes-hall2016
A gate-variable spin current demultiplexer based on graphene
Li Su, Xiaoyang Lin, Youguang Zhang +5
Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…
physics.comp-ph2016
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
cond-mat.mtrl-sci2016
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…