most citedInvestigation of Dependence between Time-zero and Time-dependent Variability in High-k NMOS Transistors

3 citations · 3 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2016

Buttiker Probe Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices

Ahmed Kamal Reza, Mohammad Khaled Hassan, Kaushik Roy

Dielectric layers are gradually being down-scaled in different electronic devices like MOSFETs and Magnetic Tunnel Junctions (MTJ) with shrinking device sizes. As a result, time de…

cond-mat.mes-hall2016★ 3 cited

Investigation of Dependence between Time-zero and Time-dependent Variability in High-k NMOS Transistors

Mohammad Khaled Hassan, Kaushik Roy

Bias Temperature Instability (BTI) is a major reliability concern in CMOS technology, especially with High dielectric constant (High-\k{appa}/HK) metal gate (MG) transistors. In ad…