N-P-N Bipolar Action in Junctionless Nanowire TFET: Physical Operation of a Modified Current Mechanism for Low Power Applications

Morteza Rahimiana, Morteza Fathipour

In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In…