collaborators

5 papers

physics.app-ph2026

Reduced Dark Current in Cd0.9Zn0.1Te Detector Arrays by Aluminium Oxide Passivation

Sudarshan Singh, Luc Montpetit, Eloïse Rahier +3

Contrary to the prevailing view that processing cadmium zinc telluride (CZT) semiconductors above 150 °C leads to irreversible device degradation, here we show that Al2O3 passivat…

physics.app-ph2026

Epitaxy of strained, nuclear-spin free Ge quantum wells from solid source materials

Maximilian Oezkent, Chen-Hsun Lu, Lucas Becker +13

Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and…

cond-mat.mtrl-sci2025

Three-dimensional atom-by-atom mapping of nanoscale precipitates in single Te inclusions in Cd0.9Zn0.1Te crystal

Eloïse Rahier, Sebastian Koelling, Guillaume Nadal +3

The complexity and richness of phenomena governing alloy crystal growth can be unraveled by examining the three-dimensional atomic-level distribution of elements and impurities inc…

cond-mat.mtrl-sci2025

Spontaneous Transition from Conformal to Two-Dimensional Growth in Ge/GeSn Core/Shell Nanowires

Simone Assali, Sebastian Koelling, Milenka Andelic +3

GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatibl…

cond-mat.mtrl-sci2025

Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers

P. Daoust, N. Rotaru, D. Biswas +9

The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing t…