5 papers · 1 filter
Reduced Dark Current in Cd0.9Zn0.1Te Detector Arrays by Aluminium Oxide Passivation
Sudarshan Singh, Luc Montpetit, Eloïse Rahier +3
Contrary to the prevailing view that processing cadmium zinc telluride (CZT) semiconductors above 150 °C leads to irreversible device degradation, here we show that Al2O3 passivat…
Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell
Gérard Daligou, Mahmoud R. M. Atalla, Cédric Lemieux-Leduc +4
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deployin…
Polarization-sensitive GeSn Mid-Infrared Membrane Photodetectors with Integrated Plasmonic Metasurface
Ziqiang Cai, Cédric Lemieux-Leduc, Mahmoud R. M. Atalla +4
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operati…
Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +5
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing,…
Transfer-printed multiple GeSn membrane mid-infrared photodetectors
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…