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H. Hofsäss

1 paper hereh-index 303.2k citations128 works total

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1
same name
  • H. Hofsäss — 1 paper, h 0

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedSingle-atom spectroscopy of phosphorus dopants implanted into graphene

101 citations · 101 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2016★ 101 cited

Single-atom spectroscopy of phosphorus dopants implanted into graphene

Toma Susi, Trevor P. Hardcastle, Hans Hofsäss +7

One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For simil…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.