most citedP-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

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cond-mat.mtrl-sci2016★ 1 cited

P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

S. Valdueza-Felip, A. Ajay, L. Redaelli +6

We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molec…

cond-mat.mtrl-sci2016

Ge doping of GaN beyond the Mott transition

A. Ajay, J. Schörmann, M. Jimenez-Rodriguez +9

We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K…