33 citations · 45 across the 3 of their papers we have counts for
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P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip, A. Ajay, L. Redaelli +6
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molec…
Defect evolution and interplay in n-type InN
Christian Rauch, Filip Tuomisto, Arantxa Vilalta-Clemente +5
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron an…
Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates
C. Liu, S. H. Chang, T. W. Noh +5
We have investigated the initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films prepared by pulsed laser deposition on sapphire (0001) s…