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cond-mat.mtrl-sci2016★ 1 cited
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip, A. Ajay, L. Redaelli +6
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molec…
cond-mat.mtrl-sci2014★ 51 cited
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero +7
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For I…