V. Stanishev

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cond-mat.mtrl-sci2026

Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

D. Gogova, D. Tran, V. Stanishev +11

Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…

cond-mat.mtrl-sci2024

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $I^^{2}$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains

Alyssa Mock, Steffen Richter, Alexis Papamichail +11

Monoclinic $I^^{2}$ -Ga $_{2}$ O $_{3}$ films grown on $c$ -plane sapphire have been shown to exhibit six $(2 ˉ 01)$ -plane oriented domains, which are equally-spaced-by-rotation around the s…

Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

Effective uniaxial dielectric function tensor and optical phonons in (2ˉ01)-plane oriented I^2-Ga2​O3​ films with equally-distributed six-fold rotation domains

Effective uniaxial dielectric function tensor and optical phonons in ( $2 ˉ 01$ )-plane oriented $I^^{2}$ -Ga $_{2}$ O $_{3}$ films with equally-distributed six-fold rotation domains