Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Y. Hung Liu, C. Wei Chong, W. Chuan Chen +6

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the…