Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Yu-Sheng Huang, Yu-Hsin Weng, Yung-Sheng Chen +6

We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100…