3 papers
physics.app-ph2026
Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
Md Abdul Hamid, Nabasindhu Das, Advait Gilankar +3
We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited…
physics.app-ph2025
Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6
This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…
physics.app-ph2025
Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
Advait Gilankar, Julian Gervassi-Saga, Martha R. McCartney +4
In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (…