activity
20142017
most citedMobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

93 citations · 136 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2017★ 36 cited

Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors

S. Dellis, I. Isakov, N. Kalfagiannis +3

We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful o…

cond-mat.mes-hall2016★ 6 cited

Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19

R. P. Beardsley, D. E. Parkes, J. Zemen +10

We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The str…

cond-mat.mtrl-sci2014★ 1 cited

Current-Mode Deep Level Transient Spectroscopy of a Semiconductor Nanowire Field-Effect Transistor

Ivan Isakov, Marion J L Sourribes, Paul A Warburton

One of the main limiting factors in the carrier mobility in semiconductor nanowires is the presence of deep trap levels. While deep-level transient spectroscopy (DLTS) has proved t…

cond-mat.mtrl-sci2014★ 93 cited

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

Marion J. L. Sourribes, Ivan Isakov, Marina Panfilova +2

We report the growth of InAsSb nanowires () grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease…