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20132017
most citedImpact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

79 citations · 120 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2017★ 79 cited

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

Christina Jones, Chu-Hsiang Teng, Qimin Yan +2

We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composit…