most citedImpact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

79 citations · 79 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2017★ 79 cited

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

Christina Jones, Chu-Hsiang Teng, Qimin Yan +2

We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composit…