collaborators

1 paper

cond-mat.mtrl-sci2017

Enhanced IR Light Absorption in Group IV-SiGeSn Core-Shell Nanowires

Anis Attiaoui, Stephan Wirth, André-Pierre Blanchard-Dionne +4

Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engi…