2 papers
quant-ph2017
Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
Rifat Ferdous, Kok W. Chan, Menno Veldhorst +6
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. Fir…
cond-mat.mes-hall2017
Valley dependent anisotropic spin splitting in silicon quantum dots
Rifat Ferdous, Erika Kawakami, Pasquale Scarlino +9
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achie…