collaborators

1 paper

cond-mat.mes-hall2017

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

M. Musolino, F. Sacconi, A. Tahraoui +5

In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relativ…