12 citations · 12 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2017
Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits
Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov +1
Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness param…
cond-mat.mes-hall2015★ 12 cited
Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators
Gennady I. Zebrev, Maxim G. Drosdetsky
This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator -…