T. Banerjee

activity

20232025

most citedMemristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing

3 citations · 6 across the 5 of their papers we have counts for

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3 papers · 1 filter

cond-mat.mtrl-sci2025

Tunable multi-bit stochasticity in La $_{0.67}$ Sr $_{0.33}$ MnO $_{3}$ -based probabilistic bits

I. Bhaduri, A. Jaman, W. Quiñonez +2

One promising approach to combat the rapidly escalating computational demands is to use networks of naturally stochastic units called probabilistic bits (p-bits). To date, hardware…

cond-mat.mtrl-sci2024

Impact of etches on thin-film single-crystal niobium resonators

H. Wang, T. Banerjee, T. G. Farinha +4

A single crystal niobium thin film was grown using molecular beam epitaxy on a c-plane sapphire wafer. Several samples were fabricated into dc resistivity test devices and coplanar…

cond-mat.mtrl-sci2023★ 3 cited

Strain Dependent Spin Hall Magnetoresistance in the Multiferroic Antiferromagnet BiFeO $_{3}$

D. Sando, S. Chen, O. Paull +9

The spin Hall magnetoresistance (SMR) of epitaxial BiFeO $_{3}$ thin films is investigated. SMR consistent with ferromagnetic interfacial states for BiFeO $_{3}$ films fabricated on (001…

Tunable multi-bit stochasticity in La0.67​Sr0.33​MnO3​-based probabilistic bits

Impact of etches on thin-film single-crystal niobium resonators

Strain Dependent Spin Hall Magnetoresistance in the Multiferroic Antiferromagnet BiFeO3​

Tunable multi-bit stochasticity in La $_{0.67}$ Sr $_{0.33}$ MnO $_{3}$ -based probabilistic bits

Strain Dependent Spin Hall Magnetoresistance in the Multiferroic Antiferromagnet BiFeO $_{3}$