most citedElectrostatic Performance of InSb, GaSb, Si and Ge p-channel Nanowires

3 citations · 3 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2017★ 3 cited

Electrostatic Performance of InSb, GaSb, Si and Ge p-channel Nanowires

Celso Martinez-Blanque, Enrique G. Marin, Alejandro Toral +4

The electrostatic performance of p-type nanowires (NWs) made of InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed and compared to that achieved by t…