Q.-R. Zhang

activity

20122017

most citedEngineering the structural and electronic phases of MoTe2 through W substitution

166 citations · 517 across the 11 of their papers we have counts for

collaborators

Showing 2013 · cond-mat.mes-hallShow all

1 paper · 2 filters

cond-mat.mes-hall2013★ 116 cited

Intrinsic carrier mobility of multi-layered MoS $_{2}$ field-effect transistors on SiO $_{2}$

N. R. Pradhan, D. Rhodes, Q. Zhang +4

By fabricating and characterizing multi-layered MoS $_{2}$ -based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations…

Intrinsic carrier mobility of multi-layered MoS2​ field-effect transistors on SiO2​

Intrinsic carrier mobility of multi-layered MoS $_{2}$ field-effect transistors on SiO $_{2}$