2 papers
cond-mat.mes-hall2017
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers, Ryan B. Lewis, Abbes Tahraoui +5
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diamet…
cond-mat.mes-hall2017
Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant
Ryan B. Lewis, Pierre Corfdir, Jesús Herranz +4
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can p…