8 citations · 10 across the 4 of their papers we have counts for
4 papers
The TRAMOS pixel as a photo-detection device: design, architecture and building blocks
Nicolas T. Fourches, Vishant Kumar, Yves Serruys +3
The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below…
Limits in point to point resolution of MOS (Metal-Oxide-Semiconductor) based pixels detector arrays
Nicolas Fourches, Xavier Coppolani, Daniel Desforge +6
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors…
Effect of 0.25 and 2.0 MeV He-ion irradiation on short-range ordering in model (EFDA) Fe-Cr alloys
S. M. Dubiel, J. Zukrowski, Y. Serruys
The effect of He+ ion irradiation on a distribution of Cr atoms in model (EFDA) Fe(100-x)Cr(x) (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectros…
Effect of He-ion irradiation on short-range ordering in model (EFDA) Fe-Cr alloys
Stanislaw M. Dubiel, Jan Żukrowski, Yves Serruys
The effect of He-ion irradiation on a short-range ordering in model Fe100-xCrx (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys…