F. Feix

most citedRadial Stark effect in (In,Ga)N nanowires

25 citations · 87 across the 5 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2017★ 16 cited

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

C. Chèze, F. Feix, J. Lähnemann +6

N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…

cond-mat.mtrl-sci2017★ 24 cited

In/GaN(0001)- $(3 \times 3) R3 0^{\circ}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

C. Chèze, F. Feix, M. Anikeeva +5

We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorba…

cond-mat.mtrl-sci2016★ 25 cited

Radial Stark effect in (In,Ga)N nanowires

Jonas Lähnemann, Pierre Corfdir, Felix Feix +5

We study the luminescence of unintentionally doped and Si-doped In $_{x}$ Ga $_{1 - x}$ N nanowires with a low In content (x<0.2) grown by molecular beam epitaxy on Si substrates. The emis…

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

In/GaN(0001)-(3​×3​)R30∘ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

Radial Stark effect in (In,Ga)N nanowires

In/GaN(0001)- $(3 \times 3) R3 0^{\circ}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices