2 papers
cond-mat.mtrl-sci2017
Investigation of interface spacing, stability, band offsets and electronic properties on (001) SrHfO3/GaAs interface : First principles calculations
Li-Bin Shi, Xiao-Ming Xiu, Xu-Yang Liu +3
SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, th…
cond-mat.mtrl-sci2017
First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions
Li-Bin Shi, Ming-Biao Li, Xiao-Ming Xiu +5
Al2O3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. Al2O3 films deposited on semiconductors usually exhibit amorphous due to lattice mismatch. Com…