2 papers
cond-mat.str-el2018
Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov +4
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is…
cond-mat.mtrl-sci2017
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…