6 papers
Electronic structure, band offset, and interface electron population of the LaInO/BaSnO system
G. Hoffmann, A. A. Riaz, C. Kalha +7
Perovskite oxides and their heterostructures exhibit a wide range of functional properties. Among these materials, BaSnO/LaInO heterostructures form high-mobility two-dimen…
Lattice dynamics and complete polarization analysis of Raman-active modes in LaInO
Jonas Rose, Hai Nguyen, Moritz MeiÃner +7
In this study, we present a comprehensive analysis of the Raman active phonon modes in orthorhombic LaInO based on a combination of polarization-angle resolved Raman spectrosco…
Reststrahlen band and optical bandgaps in semiconducting CrN films
Duc V. Dinh, Xiang Lü, Oliver Brandt +8
We present a comprehensive optical characterization of 200-nm-thick CrN(111) films grown simultaneously on AlO(0001) and AlN/AlO(0001) using plasma-assisted molecul…
Carrier transport and electrical bandgaps in epitaxial CrN layers
Duc V. Dinh, Jens Herfort, Andreas Fiedler +1
The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted m…
Rock-salt ScN(113) layers grown on AlN by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Esperanza Luna, Oliver Brandt
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel p…
Crack-free ScAlN(000) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Zhuohui Chen, Oliver Brandt
We investigate the synthesis of 340-nm-thick ScAlN layers with on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN…