3 papers
cond-mat.mtrl-sci2026
Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19
Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…
cond-mat.mtrl-sci2025
Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting
Jie Zhou, Yi Lu, Chenyu Wang +18
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, eff…
physics.app-ph2024
Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Jie Zhou, Qiming Zhang, Jiarui Gong +14
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…