5 papers
Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19
Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…
Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting
Jie Zhou, Yi Lu, Chenyu Wang +18
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, eff…
Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication
Manyang Li, Jianan Duan, Zhiyong Jin +15
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are mo…
Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions
Jie Zhou, Qiming Zhang, Jiarui Gong +14
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…
In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy
Chao Shen, Wenkang Zhan, Shujie Pan +12
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during g…