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20242026
most citedFerroelectric hysteresis in singly aligned graphene-hBN moiré superlattices

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cond-mat.mtrl-sci2026

Layer-parity-defined surface polarization in NbCl for excitonic modulation at van der Waals interfaces

Xinyue Huang, Hansheng Xu, Yuchen Gao +10

The intrinsic symmetry breaking in the breathing kagome lattice of layered NbCl provides a unique mechanism for realizing electrically polar surfaces. In each monolayer, th…

cond-mat.mtrl-sci2026

Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging

Yeri Lee, Juseung Oh, Kyung Yeol Ma +10

Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Bo…

cond-mat.mtrl-sci2026

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

Pengfei Jiao, Chenghao Qian, Ning Mao +24

Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. Howe…

cond-mat.mtrl-sci2025

Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2

Gayatri, Mehdi Arfaoui, Debashish Das +9

Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However…

cond-mat.mtrl-sci2025

Moire-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics

Arup Singha, Shaili Sett, Kenji Watanabe +3

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in fer…

cond-mat.mtrl-sci2025

Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping

Qing Lan, Wenqing Song, Siyin Zhu +13

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challeng…