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Layer-parity-defined surface polarization in NbCl for excitonic modulation at van der Waals interfaces
Xinyue Huang, Hansheng Xu, Yuchen Gao +10
The intrinsic symmetry breaking in the breathing kagome lattice of layered NbCl provides a unique mechanism for realizing electrically polar surfaces. In each monolayer, th…
Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging
Yeri Lee, Juseung Oh, Kyung Yeol Ma +10
Hexagonal boron nitride (hBN) supports a wide range of two-dimensional (2D) technologies, yet assessing its crystalline quality over large areas remains a fundamental challenge. Bo…
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2
Pengfei Jiao, Chenghao Qian, Ning Mao +24
Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. Howe…
Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2
Gayatri, Mehdi Arfaoui, Debashish Das +9
Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However…
Moire-Engineered Ferroelectric Transistors for Nearly Trap-free, Low-Power and Non-Volatile 2D Electronics
Arup Singha, Shaili Sett, Kenji Watanabe +3
Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in fer…
Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping
Qing Lan, Wenqing Song, Siyin Zhu +13
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challeng…