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cond-mat.mes-hall2020★ 2 cited
Hard wall edge confinement in 2D topological insulators and the energy of the Dirac Point
P. C. Klipstein
In 2D topological insulators (TIs) based on semiconductor quantum wells such as HgTe/CdTe or InAs/GaSb/AlSb, spin polarized edge states have been predicted with a massless Dirac li…
cond-mat.mes-hall2001★ 7 cited
Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
M. Roberts, Y. C. Chung, S. Lyapin +3
We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness between 0-1200 Å. A negati…