Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi${}_2$Se${}_3$

Jack Hellerstedt, Mark Edmonds, J. H. Chen +3

Bismuth selenide Bi${}_2$Se${}_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier…