H${}_2$-diluted precursors for GaAs doping in chemical beam epitaxy

K. Ben Saddik, A. F. Braña, N. López +2

A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H${}_2$-diluted DTBSi and CBr${}_4$ as gas precursors for Si and C. We s…