most citedDopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing

6 citations · 6 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2021★ 6 cited

Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing

Toshiyuki Tabata, Karim, Huet +5

Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity i…