2 papers
cond-mat.mes-hall2026
Self-Assembled Telecom Color Centers in Silicon and Their Growth Environment
Jacqueline Marböck, Enrique Prado Navarrete, Merve Karaman +6
Artificial atoms based on color centers in silicon (SiCCs) have recently emerged as promising candidates for highly integrable and scalable key components in photonic quantum techn…
cond-mat.mtrl-sci2024
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…