2 papers
cond-mat.mes-hall2021
Monte Carlo simulations of spin transport in nanoscale InGaAs transistors: Temperature and size effects
B Thorpe, K Kalna, S Schirmer
Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo d…
physics.comp-ph2016
Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor
B. Thorpe, K. Kalna, F. C. Langbein +1
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an i…