100 citations · 209 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci1996★ 4 cited
Ab initio shallow acceptor levels in gallium nitride
V. Fiorentini, F. Bernardini, A. Bosin +1
Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy 0.06 eV); …
cond-mat.mtrl-sci1996★ 100 cited
Theoretical evidence for efficient p-type doping of GaN using beryllium
F. Bernardini, Vincenzo Fiorentini, A. Bosin
Ab initio calculations predict that Be is a shallow acceptor in GaN. Its thermal ionization energy is 0.06 eV in wurtzite GaN; the level is valence resonant in the zincblende phase…