Influence of the thickness of Si and Ge films deposited on Si${}_3$N${}_4$/SiO${}_2$/Si substrates on their structure and diffusion of hydrogen atoms from Si${}_3$N${}_4$ layers

Larisa V. Arapkina, Kirill V. Chizh, Dmitry B. Stavrovskii +5

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si${}_3$N${}_4$/SiO${}_2$/…