Solution-processed van der Waals heterojunction as the damage-free gate contact for high performance GaN HEMTs

Chuanju Wang, Xiangming Xu, Mohamed Nejib Hedhili +2

The junctions formed between gate contact and III-nitride are crucial components of GaN-based electronics and optoelectronics. In this work, solution-processed inorganic Ti3C2Tx MX…