Di Zhang

most citedScalable

A l_{2} O_{3} - Ti O_{2}

Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

12 citations · 12 across the 1 of their papers we have counts for

collaborators

1 paper

physics.app-ph2022★ 12 cited

Scalable $A l_{2} O_{3} - Ti O_{2}$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Yang Li, Wei Wang, Di Zhang +5

Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a s…

Scalable Al2​O3​−TiO2​ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Scalable $A l_{2} O_{3} - Ti O_{2}$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices