most citedTheoretical investigation of vacancy related defects at 4H-SiC(000)/SiO interface after wet oxidation

2 citations · 2 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2022★ 2 cited

Theoretical investigation of vacancy related defects at 4H-SiC(000)/SiO interface after wet oxidation

Mukai Tsunasaki, Tomoya Ono, Mitsuharu Uemoto

The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000)/SiO interface after wet oxidation are investigated by…