17 citations · 28 across the 2 of their papers we have counts for
4 papers
Hafnia for analog memristor: Influence of stoichiometry and crystalline structure
Li-Heng Li, Kan-Hao Xue, Jun-Hui Yuan +2
The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism…
Shell DFT-1/2 method towards engineering accuracy for semiconductors: GGA versus LDA
Hanli Cui, Shengxin Yang, Jun-Hui Yuan +5
The Kohn-Sham gaps of density functional theory (DFT) obtained in terms of local density approximation (LDA) or generalized gradient approximation (GGA) cannot be directly linked t…
: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility
Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue +7
Two-dimensional materials with a proper band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolaye…
KTlO: A metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism
Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li +4
Two-dimensional (2D) materials with high carrier mobility and tunable magnetism are in high demand for nanoelectronics and spintronic applications. Herein, we predict a novel two-d…